| 1. | Barrier layer semiconductive ceramics
层容量半导体磁器 |
| 2. | Shockley barrier layer
肖克利势垒层 |
| 3. | Barrier layer cell
阻挡层光电元件 |
| 4. | Barrier layer capacitor
障壁容量 |
| 5. | Divisional method and characteristic analysis of impermeable barrier layers in carbonate rock formation
碳酸盐岩储层中非渗透性隔层的识别及分类评价 |
| 6. | The exciton lifetime in quantum well is up to 1 . 8 ps under the thickness of znse barrier layer lonm
在znse隔离层厚度10nm时，阱中的激子寿命为1 . 8ps 。 |
| 7. | It is found that the highest consumption rates of barrier layers in certain parts of flip - chip joints are related to the current crowding phenomena
结果发现在覆晶接点中，障层的消耗速率和电流聚集的位置有密切关联。 |
| 8. | 3 harmonized system of quality assessment for electronic components . sectional specification . fixed ceramic dielectric capacitors of barrier layer type dielectric class 3
电子元件.质量保证体系.阻挡层型陶瓷固定电容器 |
| 9. | Harmonized system of quality assessment for electronic components ; sectional specification ; fixed ceramic dielectric ; capacitors of barrier layer type dielectric class 3
电子元件质量评定协调体系.分规范.陶瓷介质绝缘层固 |
| 10. | We found that the exciton transference between cdznse quantum well and cdse quantum dots is dominated by exciton tunneling at a thin znse barrier layer
在薄隔离层时，量子阱与量子点之间的激子转移过程由激子隧穿过程决定。 |
